SiCP selective epitaxial growth in recessed source/drain regions yielding to drive current enhancement in n-channel MOSFET

Bauer, M.M.BauerMachkaoutsan, V.V.MachkaoutsanWeeks, D.D.WeeksZhang, Y.Y.ZhangThomas, S.G.S.G.ThomasVerheyen, PeterPeterVerheyenKerner, ChristophChristophKernerClemente, FrancescaFrancescaClementeBender, HugoHugoBenderShamiryan, DenisDenisShamiryanLoo, RogerRogerLooHoffmann, ThomasThomasHoffmannAbsil, PhilippePhilippeAbsilBiesemans, SergeSergeBiesemans2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/13350SiCP selective epitaxial growth in recessed source/drain regions yielding to drive current enhancement in n-channel MOSFETMeeting abstract