Bias Temperature Instability (BTI) in high-mobility channel devices: SiGe, Ge, and InGaAs

Franco, JacopoJacopoFrancoKaczer, BenBenKaczerVais, AbhitoshAbhitoshVaisSioncke, SonjaSonjaSionckeArimura, HiroakiHiroakiArimuraPutcha, VamsiVamsiPutchaAlian, AliRezaAliRezaAlianWaldron, NiamhNiamhWaldronZhou, DaisyDaisyZhouNyns, LauraLauraNynsMitard, JeromeJeromeMitardWitters, LiesbethLiesbethWittersHeyns, MarcMarcHeynsGroeseneken, GuidoGuidoGroesenekenCollaert, NadineNadineCollaertLinten, DimitriDimitriLinten2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/26631Bias Temperature Instability (BTI) in high-mobility channel devices: SiGe, Ge, and InGaAsProceedings paper