Relaxation analysis to understand positive bias induced trapping in ferroelectric FETs with Si and Gd dopants

Wang, Yu-YunYu-YunWangWang, Kuan-ChiKuan-ChiWangChang, Ting -YuTing -YuChangRonchi, NicoloNicoloRonchiO'Sullivan, BarryBarryO'SullivanBanerjee, KaustuvKaustuvBanerjeeVan den Bosch, GeertGeertVan den BoschVan Houdt, JanJanVan HoudtWu, Tian-LiTian-LiWu2023-03-092022-12-302023-03-0920220026-2714WOS:000896862600011https://imec-publications.be/handle/20.500.12860/40921Relaxation analysis to understand positive bias induced trapping in ferroelectric FETs with Si and Gd dopantsJournal article10.1016/j.microrel.2022.114680WOS:000896862600011