Piontek, AndreasAndreasPiontekVanhoucke, T.T.VanhouckeVan Huylenbroeck, StefaanStefaanVan HuylenbroeckChoi, Li JenLi JenChoiHurkx, G.A.M.G.A.M.HurkxHijzen, E.E.HijzenDecoutere, StefaanStefaanDecoutere2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12713Influence of lateral device scaling and airgap deep trench isolation on reliability performance of 200GHz SiGe:C HBTsJournal article