Advanced electrical characterization toward (sub) 1nm EOT HfSiON – hole trapping in PFET and L-dependent effects

Zahid, MohammedMohammedZahidPantisano, LuigiLuigiPantisanoDegraeve, RobinRobinDegraeveAoulaiche, MarcMarcAoulaicheTrojman, LionelLionelTrojmanFerain, IsabelleIsabelleFerainSan Andres Serrano, EnriqueEnriqueSan Andres SerranoGroeseneken, GuidoGuidoGroesenekenZhang, J.F.J.F.ZhangHeyns, MarcMarcHeynsJurczak, GosiaGosiaJurczakDe Gendt, StefanStefanDe Gendt2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/13257Advanced electrical characterization toward (sub) 1nm EOT HfSiON – hole trapping in PFET and L-dependent effectsProceedings paper