A novel isolation scheme featuring cavities in the collector for a high-speed 0.13μm SiGe:C BiCMOS technology

Choi, Li JenLi JenChoiVan Huylenbroeck, StefaanStefaanVan HuylenbroeckDonkers, JohanJohanDonkersvan Noort, WiboWibovan NoortPiontek, AndreasAndreasPiontekSibaja-Hernandez, ArturoArturoSibaja-HernandezMeunier-Beillard, PhilippePhilippeMeunier-BeillardNeuilly, FrancoisFrancoisNeuillyKunnen, EddyEddyKunnenLeray, PhilippePhilippeLerayVleugels, FrankFrankVleugelsVenegas, RafaelRafaelVenegasHijzen, ErwinErwinHijzenDecoutere, StefaanStefaanDecoutere2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/11862A novel isolation scheme featuring cavities in the collector for a high-speed 0.13μm SiGe:C BiCMOS technologyProceedings paper