A comprehensive model for breakdown mechanism in HfO2 high-k gate stacks

Ranjan, R.R.RanjanPey, K.L.K.L.PeyTung, C.H.C.H.TungTang, L.J.L.J.TangGroeseneken, GuidoGuidoGroesenekenBera, L.K.L.K.BeraDe Gendt, StefanStefanDe Gendt2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9495A comprehensive model for breakdown mechanism in HfO2 high-k gate stacksProceedings paper