Atomically controlled processing for dopant segregation in CVD Si and Ge epitaxial growth

Murota, JunichiJunichiMurotaYamamoto, YuchiYuchiYamamotoCostina, IoanIoanCostinaTillack, BerndBerndTillackLe Thanh, VinVinLe ThanhLoo, RogerRogerLooCaymax, MattyMattyCaymax2021-10-242021-10-242017-05https://imec-publications.be/handle/20.500.12860/29044Atomically controlled processing for dopant segregation in CVD Si and Ge epitaxial growthProceedings paperhttp://ecst.ecsdl.org/content/79/1/33.short?rss=1