LKE and BGI Lorentzian noise in strained and non-strained tri-gate SOI FinFETs with HfSiON/SiO2 gate dielectric

Lukyanchikova, N.N.LukyanchikovaGarbar, N.N.GarbarKudina, V.V.KudinaSmolanka, A.A.SmolankaSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-192021-10-1920110038-1101https://imec-publications.be/handle/20.500.12860/19346LKE and BGI Lorentzian noise in strained and non-strained tri-gate SOI FinFETs with HfSiON/SiO2 gate dielectricJournal article