On the origin of the mobility reduction in bulk-Si, UTBOX-FDSOI and SiGe devices with ultrathin-EOT dielectrics

Ragnarsson, Lars-AkeLars-AkeRagnarssonMitard, JeromeJeromeMitardKauerauf, ThomasThomasKaueraufDe Keersgieter, AnAnDe KeersgieterSchram, TomTomSchramRohr, ErikaErikaRohrCollaert, NadineNadineCollaertJurczak, GosiaGosiaJurczakHong, Sug-HunSug-HunHongTseng, JoshuaJoshuaTsengWang, Wei-EWei-EWangTrojman, LionelLionelTrojmanBourdelle, KonstantinKonstantinBourdelleNguyen, B-YB-YNguyenAbsil, PhilippePhilippeAbsilHoffmann, Thomas Y.Thomas Y.Hoffmann2021-10-192021-10-192011https://imec-publications.be/handle/20.500.12860/19652On the origin of the mobility reduction in bulk-Si, UTBOX-FDSOI and SiGe devices with ultrathin-EOT dielectricsProceedings paper