Substrate bias dependency of sense margin and retention in bulk FinFET 1T-DRAM cells

Collaert, NadineNadineCollaertAoulaiche, MarcMarcAoulaicheDe Keersgieter, AnAnDe KeersgieterDe Wachter, BartBartDe WachterAltimime, LaithLaithAltimimeJurczak, GosiaGosiaJurczak2021-10-192021-10-1920110038-1101https://imec-publications.be/handle/20.500.12860/18719Substrate bias dependency of sense margin and retention in bulk FinFET 1T-DRAM cellsJournal article