Wang, X.P.X.P.WangLi, M.F.M.F.LiYu, HongYuHongYuYuYang, J.J.J.J.YangChen, J.D.J.D.ChenZhu, C.X.C.X.ZhuDu, A.Y.A.Y.DuLoh, W.Y.W.Y.LohBiesemans, SergeSergeBiesemansChin, A.A.ChinLo, G.Q.G.Q.LoKwong, D.L.D.L.Kwong2021-10-172021-10-1720080741-3106https://imec-publications.be/handle/20.500.12860/14774Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectricJournal article