p-GaN e-mode HEMT power device manufacturing on 200mm substrates using aixtron AIX G5+C MOCVD system

Liang, HuHuLiangPosthuma, NielsNielsPosthumaEickelkamp, MartinMartinEickelkampFahle, DirkDirkFahleVan Hove, MarleenMarleenVan HoveZhao, MingMingZhaoDecoutere, StefaanStefaanDecoutereLanger, RobertRobertLanger2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/26908p-GaN e-mode HEMT power device manufacturing on 200mm substrates using aixtron AIX G5+C MOCVD systemMeeting abstract