Contributions of channel gate and overlap gate currents on 1/f gate current noise for thin gate oxide p-MOSFETs

Martinez, F.F.MartinezLaigle, A.A.LaigleHoffmann, A.A.HoffmannValenza, M.M.ValenzaVeloso, AnabelaAnabelaVelosoJurczak, GosiaGosiaJurczak2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10867Contributions of channel gate and overlap gate currents on 1/f gate current noise for thin gate oxide p-MOSFETsProceedings paper