Random band-edge model description of thermoelectricity in high-mobility disordered semiconductors: Application to the amorphous oxide In-Ga-Zn-O

Fishchuk, Ivan I.Ivan I.FishchukKadashchuk, AndriyAndriyKadashchukRolin, CedricCedricRolinBaessler, HeinzHeinzBaesslerKoehler, AnnaAnnaKoehlerHeremans, PaulPaulHeremansGenoe, JanJanGenoe2022-08-312022-07-212022-07-262022-08-3120222469-9950WOS:000823764700003https://imec-publications.be/handle/20.500.12860/40154Random band-edge model description of thermoelectricity in high-mobility disordered semiconductors: Application to the amorphous oxide In-Ga-Zn-OJournal article10.1103/PhysRevB.105.245201WOS:000823764700003PhysicsCONDUCTIVITYTEMPERATUREFIGUREMERIT