Model for interface defect and positive charge generation in ultrathin SiO2/ZrO2 gate dielectric stacks

Houssa, M.M.HoussaAutran, J.L.J.L.AutranStesmans, AndreAndreStesmansHeyns, MarcMarcHeyns2021-10-142021-10-142002https://imec-publications.be/handle/20.500.12860/6410Model for interface defect and positive charge generation in ultrathin SiO2/ZrO2 gate dielectric stacksJournal article