In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition : Initial growth of HfO2 on Si and Ge substrates

Devloo-Casier, K.K.Devloo-CasierDendooven, J.J.DendoovenLudwig, K.F.K.F.LudwigLekens, GeertGeertLekensD'Haen, JanJanD'HaenDetavernier, C.C.Detavernier2021-10-192021-10-1920110003-6951https://imec-publications.be/handle/20.500.12860/18839In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition : Initial growth of HfO2 on Si and Ge substratesJournal article