Modeling Analysis of BTI-Driven Degradation of a Ring Oscillator Designed in a 28-nm CMOS Technology

Sangani, DishantDishantSanganiDiaz Fortuny, JavierJavierDiaz FortunyBury, ErikErikBuryFranco, JacopoJacopoFrancoKaczer, BenBenKaczerGielen, GeorgesGeorgesGielen2024-04-252023-10-132024-04-2520231530-4388WOS:001063339300006https://imec-publications.be/handle/20.500.12860/42731Modeling Analysis of BTI-Driven Degradation of a Ring Oscillator Designed in a 28-nm CMOS TechnologyJournal article10.1109/TDMR.2023.3288380WOS:001063339300006INSTABILITY