A TCAD low-field electron mobility model for thin-body InGaAs on InP MOSFETs calibrated to experimental characteristics

Betti Beneventi, GiovanniGiovanniBetti BeneventiReggiani, SusannaSusannaReggianiGnudi, AntonioAntonioGnudiGnani, ElenaElenaGnaniAlian, AliRezaAliRezaAlianCollaert, NadineNadineCollaertMocuta, AndaAndaMocutaThean, AaronAaronTheanBaccarani, GiorgioGiorgioBaccarani2021-10-222021-10-2220150018-9383https://imec-publications.be/handle/20.500.12860/24989A TCAD low-field electron mobility model for thin-body InGaAs on InP MOSFETs calibrated to experimental characteristicsJournal articlehttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7293162