Zhang, WenqiWenqiZhangZhang, JennyJennyZhangLalor, M.M.LalorBurton, D.D.BurtonGroeseneken, GuidoGuidoGroesenekenDegraeve, RobinRobinDegraeve2021-10-142021-10-142001https://imec-publications.be/handle/20.500.12860/5873Properties of electron traps generated in the gate oxideOral presentation