Towards Improved Nanosheet-Based Complementary Field Effect Transistor (CFET) Performance Down to 42nm Contacted Gate Pitch

Chiarella, ThomasThomasChiarellaMatagne, PhilippePhilippeMatagneMertens, HansHansMertensHosseini, MaryamMaryamHosseiniZhou, X.X.ZhouEyben, PierrePierreEybenArimura, HiroakiHiroakiArimuraGupta, AnshulAnshulGuptaRichard, OlivierOlivierRichardDrijbooms, ChrisChrisDrijboomsCaluwaerts, RudyRudyCaluwaertsHoriguchi, NaotoNaotoHoriguchiMitard, JeromeJeromeMitard2024-09-142024-09-142024979-8-3503-8308-9WOS:001223367200243https://imec-publications.be/handle/20.500.12860/44488Towards Improved Nanosheet-Based Complementary Field Effect Transistor (CFET) Performance Down to 42nm Contacted Gate PitchProceedings paper10.1109/EDTM58488.2024.10512269979-8-3503-7152-9WOS:001223367200243