Effects of border traps on transfer curve hysteresis and split-CV mobility measurement in InGaAs quantum-well MOSFETs

Pavan, PaoloPaoloPavanPuglisi, F. M.F. M.PuglisiZagni, NicoloNicoloZagniAlian, AliRezaAliRezaAlianThean, AaronAaronTheanCollaert, NadineNadineCollaertVerzellesi, G.G.Verzellesi2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/27127Effects of border traps on transfer curve hysteresis and split-CV mobility measurement in InGaAs quantum-well MOSFETsProceedings paper