Comparison of standard macroscopic and conductive atomic force microscopy leakage measurements on gate removed high-k capacitors

Polspoel, WouterWouterPolspoelVandervorst, WilfriedWilfriedVandervorstAguilera, L.L.AguileraPorti, M.M.PortiNafria, M.M.NafriaAymerich, X.X.Aymerich2021-10-182021-10-1820091071-1023https://imec-publications.be/handle/20.500.12860/16036Comparison of standard macroscopic and conductive atomic force microscopy leakage measurements on gate removed high-k capacitorsJournal article