Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors

Illarionov, Yu. Yu.Yu. Yu.IllarionovKarl, A.A.KarlSmets, QuentinQuentinSmetsKaczer, BenBenKaczerKnobloch, T.T.KnoblochPanarella, LucaLucaPanarellaSchram, TomTomSchramBrems, StevenStevenBremsCott, DaireDaireCottAsselberghs, IngeIngeAsselberghsGrasser, T.T.Grasser2024-02-132024-02-132024-FEB 22397-7132WOS:001156555700001https://imec-publications.be/handle/20.500.12860/43543Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistorsJournal article10.1038/s41699-024-00445-0WOS:001156555700001COMPACT-PHYSICS FRAMEWORK2-DIMENSIONAL MATERIALSHYSTERESIS