Correlating Structural and Electrical Characteristics of Threading Dislocations in GaN-on-Si Heterostructures and p-n Diodes by Multiple Microscopy Techniques

Minj, AlbertAlbertMinjGeens, KarenKarenGeensLiang, HuHuLiangHan, HanHanHanNoel, CelineCelineNoelBakeroot, BenoitBenoitBakerootParedis, KristofKristofParedisZhao, MingMingZhaoHantschel, ThomasThomasHantschelDecoutere, StefaanStefaanDecoutere2023-03-272023-03-272023-03-232331-7019https://imec-publications.be/handle/20.500.12860/41396Correlating Structural and Electrical Characteristics of Threading Dislocations in GaN-on-Si Heterostructures and p-n Diodes by Multiple Microscopy TechniquesJournal articlePhysicsGaNscanning capacitance microscopythreading dislocationsKelvin probe force microscopyUNOGAN-896390