Interface trap characterization of a 5.8-Å EOT p-MOSFET using high frequency on-chip ring oscillator charge pumping technique

Cho, Moon JuMoon JuChoKaczer, BenBenKaczerAoulaiche, MarcMarcAoulaicheDegraeve, RobinRobinDegraeveRoussel, PhilippePhilippeRousselFranco, JacopoJacopoFrancoKauerauf, ThomasThomasKaueraufRagnarsson, Lars-AkeLars-AkeRagnarssonHoffmann, Thomas Y.Thomas Y.HoffmannGroeseneken, GuidoGuidoGroeseneken2021-10-192021-10-192011-100018-9383https://imec-publications.be/handle/20.500.12860/18692Interface trap characterization of a 5.8-Å EOT p-MOSFET using high frequency on-chip ring oscillator charge pumping techniqueJournal article