Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

Wu, Tian-LiTian-LiWuMarcon, DenisDenisMarconRonchi, NicoloNicoloRonchiBakeroot, BenoitBenoitBakerootYou, ShuzhenShuzhenYouStoffels, SteveSteveStoffelsVan Hove, MarleenMarleenVan HoveBisi, DavideDavideBisiMeneghini, MatteoMatteoMeneghiniGroeseneken, GuidoGuidoGroesenekenDecoutere, StefaanStefaanDecoutere2021-10-232021-10-2320150038-1101https://imec-publications.be/handle/20.500.12860/26194Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectricsJournal articlehttp://www.sciencedirect.com/science/article/pii/S0038110114002159