Ge-source vertical tunnel FETs using a novel replacement-source integration scheme

Rooyackers, RitaRitaRooyackersVandooren, AnneAnneVandoorenVerhulst, AnneAnneVerhulstWalke, AmeyAmeyWalkeSimoen, EddyEddySimoenDevriendt, KatiaKatiaDevriendtLocorotondo, SabrinaSabrinaLocorotondoDemand, MarcMarcDemandBryce, GeorgeGeorgeBryceLoo, RogerRogerLooHikavyy, AndriyAndriyHikavyyVandeweyer, TomTomVandeweyerHuyghebaert, CedricCedricHuyghebaertCollaert, NadineNadineCollaertThean, AaronAaronThean2021-10-222021-10-222014-120018-9383https://imec-publications.be/handle/20.500.12860/24454Ge-source vertical tunnel FETs using a novel replacement-source integration schemeJournal articlehttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6954497