A new quality metric for III-V/high-k MOS gate stacks based on the frequency dispersion of accumulation capacitance and the CET

Vais, AbhitoshAbhitoshVaisFranco, JacopoJacopoFrancoMartens, KoenKoenMartensLin, DennisDennisLinSioncke, SonjaSonjaSionckePutcha, VamsiVamsiPutchaNyns, LauraLauraNynsMaes, JanJanMaesXie, QiQiXieGivens, MichaelMichaelGivensTang, FuFuTangJiang, XiaoqiangXiaoqiangJiangMocuta, AndaAndaMocutaCollaert, NadineNadineCollaertThean, AaronAaronTheanDe Meyer, KristinKristinDe Meyer2021-10-242021-10-2420170741-3106https://imec-publications.be/handle/20.500.12860/29616A new quality metric for III-V/high-k MOS gate stacks based on the frequency dispersion of accumulation capacitance and the CETJournal articlehttp://ieeexplore.ieee.org/document/7833041/