Low temperature in-situ P-doped Ge using Ge2H6 for use in optical applications

Shimura, YosukeYosukeShimuraSrinivasan, AshwynAshwynSrinivasanVan Deun, RikRikVan DeunPantouvaki, MariannaMariannaPantouvakiVan Campenhout, JorisJorisVan CampenhoutLoo, RogerRogerLoo2021-10-222021-10-222015-05https://imec-publications.be/handle/20.500.12860/25901Low temperature in-situ P-doped Ge using Ge2H6 for use in optical applicationsMeeting abstract