Chen, YangyinYangyinChenGoux, LudovicLudovicGouxPantisano, LuigiLuigiPantisanoSwerts, JohanJohanSwertsAdelmann, ChristophChristophAdelmannMertens, SofieSofieMertensAfanasiev, ValeriValeriAfanasievWang, Xin PengXin PengWangGovoreanu, BogdanBogdanGovoreanuDegraeve, RobinRobinDegraeveKubicek, StefanStefanKubicekParaschiv, VasileVasileParaschivJossart, NicoNicoJossartAltimime, LaithLaithAltimimeJurczak, GosiaGosiaJurczakKittl, JorgeJorgeKittlGroeseneken, GuidoGuidoGroesenekenWouters, DirkDirkWouters2021-10-212021-10-2120130167-9317https://imec-publications.be/handle/20.500.12860/22130Scaled X-bar TiN/HfO2/TiN RRAM cells processed with optimised plasma enhanced atomic layer deposition (PEALD) for TiN electrodeJournal article