Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: dependence on Mg-doping level

Rossetto, IsabellaIsabellaRossettoMeneghini, MatteoMatteoMeneghiniCanato, E.E.CanatoBarbato, M.M.BarbatoStoffels, SteveSteveStoffelsPosthuma, NielsNielsPosthumaDecoutere, StefaanStefaanDecoutereTallarico, AndreaAndreaTallaricoMeneghesso, GaudenzioGaudenzioMeneghessoZanoni, EnricoEnricoZanoni2021-10-242021-10-2420170026-2714https://imec-publications.be/handle/20.500.12860/29326Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: dependence on Mg-doping levelJournal articlehttp://www.sciencedirect.com/science/article/pii/S0026271417302494