Ultra low power SiGe: C HBT for 0.18μm RF-BiCMOS

Xu, MingweiMingweiXuDecoutere, StefaanStefaanDecoutereSibaja-Hernandez, ArturoArturoSibaja-HernandezVan Wichelen, KoenKoenVan WichelenWitters, LiesbethLiesbethWittersLoo, RogerRogerLooKunnen, EddyEddyKunnenKnorr, C.C.KnorrSadovnikov, A.A.SadovnikovBulucea, C.C.Bulucea2021-10-152021-10-152003-12https://imec-publications.be/handle/20.500.12860/8417Ultra low power SiGe: C HBT for 0.18μm RF-BiCMOSProceedings paper