Influence of stoichiometry of direct plasma-enhanced chemical vapor deposited SiNx films and silicon substrate surface roughness on surface passivation

De Wolf, StefaanStefaanDe WolfAgostinelli, GuidoGuidoAgostinelliBeaucarne, GuyGuyBeaucarneVitanov, P.P.Vitanov2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10340Influence of stoichiometry of direct plasma-enhanced chemical vapor deposited SiNx films and silicon substrate surface roughness on surface passivationJournal article