Effect of capture and escape phenomena in Monte Carlo technique on the simulation of the nonlinear characteristics in high electron mobility transistors

Abou-Khalil, M.M.Abou-KhalilSchreurs, DominiqueDominiqueSchreursNauwelaers, BartBartNauwelaersVan Rossum, MarcMarcVan RossumMaciejko, R.R.MaciejkoWuyts, KoenKoenWuyts2021-09-302021-09-301997https://imec-publications.be/handle/20.500.12860/1693Effect of capture and escape phenomena in Monte Carlo technique on the simulation of the nonlinear characteristics in high electron mobility transistorsJournal article