ESD diodes with Si/SiGe superlattice I/O finFET architecture in a vertically stacked horizontal nanowire technology

Simicic, MarkoMarkoSimicicHellings, GeertGeertHellingsChen, Shih-HungShih-HungChenHoriguchi, NaotoNaotoHoriguchiLinten, DimitriDimitriLinten2021-10-262021-10-262018https://imec-publications.be/handle/20.500.12860/31779ESD diodes with Si/SiGe superlattice I/O finFET architecture in a vertically stacked horizontal nanowire technologyProceedings paperhttps://ieeexplore.ieee.org/document/8486885