Strained Si and strained SiGe fabrication schemes using (selective) epitaxial growth in a RPCVD system

Loo, RogerRogerLooDelhougne, RomainRomainDelhougneMeunier-Beillard, PhilippePhilippeMeunier-BeillardCaymax, MattyMattyCaymax2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/7822Strained Si and strained SiGe fabrication schemes using (selective) epitaxial growth in a RPCVD systemOral presentation