ESD protection devices placed inside keep-out zone (KOZ) of through silicon via (TSV) in 3D stacked integrated circuits

Chen, Shih-HungShih-HungChenThijs, StevenStevenThijsLinten, DimitriDimitriLintenScholz, MirkoMirkoScholzHellings, GeertGeertHellingsGroeseneken, GuidoGuidoGroeseneken2021-10-202021-10-202012-09https://imec-publications.be/handle/20.500.12860/20442ESD protection devices placed inside keep-out zone (KOZ) of through silicon via (TSV) in 3D stacked integrated circuitsProceedings paper