The effect of forming gas annealing on capacitance-voltage hysteresis in the high- $j/In0.53Ga0.47As metal-oxide-semiconductor system

Lin, JunJunLinMonaghan, ScottScottMonaghanCherkaoui, KarimKarimCherkaouiPovey, Ian M.Ian M.PoveySheehan, BrendanBrendanSheehanFranco, JacopoJacopoFrancoHurley, Paul K.Paul K.Hurley2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/26913The effect of forming gas annealing on capacitance-voltage hysteresis in the high- $j/In0.53Ga0.47As metal-oxide-semiconductor systemProceedings paper