Evidence of hot-electron degradation in GaN-based MIS-HEMTs submitted to high temperature constant source current stress

Ruzzarin, MariaMariaRuzzarinMeneghini, MatteoMatteoMeneghiniRossetto, IsabellaIsabellaRossettoVan Hove, MarleenMarleenVan HoveStoffels, SteveSteveStoffelsWu, Tian-LiTian-LiWuDecoutere, StefaanStefaanDecoutereMeneghesso, GaudenzioGaudenzioMeneghessoZanoni, EnricoEnricoZanoni2021-10-232021-10-2320160741-3106https://imec-publications.be/handle/20.500.12860/27250Evidence of hot-electron degradation in GaN-based MIS-HEMTs submitted to high temperature constant source current stressJournal articlehttp://ieeexplore.ieee.org/document/7565474/