Effects of pre-amorphization implantation (PAI) in ultra shallow junctions formed by SPER in deep sub-micron devices

Severi, SimoneSimoneSeveriHenson, KirklenKirklenHensonLindsay, RichardRichardLindsayDe Meyer, KristinKristinDe Meyer2021-10-152021-10-152004-01https://imec-publications.be/handle/20.500.12860/9579Effects of pre-amorphization implantation (PAI) in ultra shallow junctions formed by SPER in deep sub-micron devicesProceedings paper