Electron band alignment at the interface of (100)GaSb with molecular-beam deposited Al2O3

Afanasiev, ValeriValeriAfanasievChou, H.-Y.H.-Y.ChouStesmans, AndreAndreStesmansMerckling, ClementClementMercklingSun, XiaoXiaoSun2021-10-192021-10-1920110003-6951https://imec-publications.be/handle/20.500.12860/18452Electron band alignment at the interface of (100)GaSb with molecular-beam deposited Al2O3Journal article