Reverse-bias degradation of AlGaN/GaN vertical Schottky diodes: an investigation based on electrical and capacitive measurements

Meneghini, M.M.MeneghiniBertin, M.M.BertinDal Santo, G.G.Dal SantoStocco, A.A.StoccoBisi, D.D.BisiMarcon, DenisDenisMarconMalinowski, PawelPawelMalinowskiChini, A.A.ChiniMenghesso, G.G.MenghessoZanoni, E.E.Zanoni2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/21132Reverse-bias degradation of AlGaN/GaN vertical Schottky diodes: an investigation based on electrical and capacitive measurementsProceedings paper