Switching layer optimization in Co-based CBRAM for >10 5 memory window in sub-100 µA regime

Cho, YongjunYongjunChoKang, Bo SooBo SooKangKumbhare, PankajPankajKumbhareDelhougne, RomainRomainDelhougneNyns, LauraLauraNynsMao, MingMingMaoGoux, LudovicLudovicGouxKar, Gouri SankarGouri SankarKarBelmonte, AttilioAttilioBelmonte2025-04-102024-11-102025-04-1020240038-1101WOS:001346257100001https://imec-publications.be/handle/20.500.12860/44762Switching layer optimization in Co-based CBRAM for >10 5 memory window in sub-100 µA regimeJournal article10.1016/j.sse.2024.108964WOS:001346257100001RESISTIVE MEMORYFILAMENT