Patterning capabilities of 40-nm contact holes at 80-nm pitch: EUV vs. Line/Space double exposure immersion lithography

Lazzarino, FredericFredericLazzarinoTruffert, VincentVincentTruffertBekaert, JoostJoostBekaertDemuynck, StevenStevenDemuynckGoethals, MiekeMiekeGoethalsStruyf, HerbertHerbertStruyf2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/17453Patterning capabilities of 40-nm contact holes at 80-nm pitch: EUV vs. Line/Space double exposure immersion lithographyMeeting abstract