EUV Single Patterning Exploration for Pitch 28 nm

Xu, DongboDongboXuGillijns, WernerWernerGillijnsDrissi, YoussefYoussefDrissiTan, Ling EeLing EeTanOak, ApoorvaApoorvaOakKim, Ryan Ryoung hanRyan Ryoung hanKimYuan, Chi-MinKim, Ryan Ryoung2022-06-242021-11-022022-05-172022-06-242021-02-220277-786XWOS:000672647800018https://imec-publications.be/handle/20.500.12860/37771EUV Single Patterning Exploration for Pitch 28 nmProceedings paper10.1117/12.2584730978-1-5106-4062-7WOS:000672647800018Design Rule, Design Retarget, EUV Lithography, NTD Process, EUV Single Patterning