Extraction of the lightly doped drain concentration of fully depleted SOI NMOSFETs using the back gate bias effect

Nicolett, A. S.A. S.NicolettMartino, Joao AntonioJoao AntonioMartinoSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-142021-10-142000https://imec-publications.be/handle/20.500.12860/4618Extraction of the lightly doped drain concentration of fully depleted SOI NMOSFETs using the back gate bias effectJournal article