HfSiO(N) composition depth profiling: can we get a quantitative answer using SIMS?

Conard, ThierryThierryConardChen, PingPingChenJanssens, TomTomJanssensBrijs, BertBertBrijsVandervorst, WilfriedWilfriedVandervorstVan Elshocht, SvenSvenVan ElshochtMack, P.P.MackWeber, U.U.WeberLehnen, P.P.Lehnen2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10251HfSiO(N) composition depth profiling: can we get a quantitative answer using SIMS?Proceedings paper