Channel-hot-carrier degradation of strained MOSFETs: a device level and nanoscale combined approach

Wu, QianQianWuPorti, MarcMarcPortiBayerl, AlbinAlbinBayerlMartin-Martinez, JavierJavierMartin-MartinezRodriguez, RosanaRosanaRodriguezNafria, MontserratMontserratNafriaAymerich, XavierXavierAymerichSimoen, EddyEddySimoen2021-10-232021-10-2320151071-1023https://imec-publications.be/handle/20.500.12860/26190Channel-hot-carrier degradation of strained MOSFETs: a device level and nanoscale combined approachJournal articlehttp://scitation.aip.org/content/avs/journal/jvstb/33/2/10.1116/1.4913950