Stress in silicon due to the formation of self aligned poly-CoSi2 lines studied by micro-Raman spectroscopy

Howard, DaveDaveHowardDe Wolf, IngridIngridDe WolfBender, HugoHugoBenderMaex, KarenKarenMaex2021-09-292021-09-291996https://imec-publications.be/handle/20.500.12860/1265Stress in silicon due to the formation of self aligned poly-CoSi2 lines studied by micro-Raman spectroscopyProceedings paper